The first purely silicon oxide-based ‘Resistive RAM’ memory chip that can operate in ambient conditions – opening up the possibility of new super-fast memory - has been developed by researchers at UCL.
Resistive RAM (or ‘ReRAM’) memory chips are based on materials, most often oxides of metals, whose electrical resistance changes when a voltage is applied – and they “remember” this change even when the power is turned off. ReRAM chips promise significantly greater...
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